Memory device in which one type carrier stored during write cont

Details Memory device in which one type carrier stored during write cont Memory device in which one type carrier stored during write cont

1979-10-30

1981-01-27

Hecker, Stuart N.

Static information storage and retrieval

Systems using particular element

Semiconductive

357 23, 365185, G11C 1140

Patent

active

042479169

ABSTRACT:
A RAM device employs an array of dual gated transistor memory cells accessed by row and column decoding. A separate P type memory region is provided under the column gate which acquires holes as a function of the input data during the write cycle, for controlling the flow of an output electron current during the subsequent read cycle. The write holes flow from the substrate into the P memory region to record a "1" when both the row gate and the column gate are at a low positive potential. The write holes become trapped in the P memory region when the low write voltage on the row gate is replaced by a higher storage voltage. During the read cycle both gates are high, and electron current flows from source to drain along a continuous electron conductive path formed under both gates. The high row voltage causes electron conduction at the surface of the P substrate under the row gate by establishing an N type inversion layer. The high column voltage in combination with the positive charge of the write holes promotes the flow of read electrons under the column gate through a buried N channel adjacent to the P memory region. The read conductive path between the source and drain is formed by the row inversion layer plus the N channel. The stratified charge structure functions as an additional gate beneath the column gate which requires trapped write holes in order to allow electron flow when the row and column gates are activated during read.

REFERENCES:
patent: 3728695 (1973-04-01), Bentchkowsky
patent: 3971055 (1976-07-01), Arai
patent: 4000504 (1976-12-01), Berger
patent: 4090257 (1978-05-01), Williams
patent: 4112575 (1978-09-01), Fu et al.
patent: 4122543 (1978-10-01), Bert et al.
patent: 4126900 (1978-11-01), Koomen et al.
patent: 4158238 (1979-06-01), Erb

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