Method of making a semiconductor device with adjustable threshol

Details Method of making a semiconductor device with adjustable threshol Method of making a semiconductor device with adjustable threshol

1997-07-09

1999-10-05

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438257, 438264, H01L 213205

Patent

active

059638249

ABSTRACT:
The present invention provides a method of making a semiconductor device with a channel length of approximately 0.05 microns. A method of producing a semiconductor device according to the present invention includes a control gate, a first floating gate located in proximity to the control gate, and a second floating gate located in proximity to the control gate. The present invention allows the threshold voltage of the device to be adjusted to various levels. Additionally, the device according to the present invention can be used as a very effective nonvolatile memory device.

REFERENCES:
patent: 5480820 (1996-01-01), Roth et al.
patent: 5674768 (1997-10-01), Chang et al.

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