Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1991-07-11
1996-12-24
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257 69, 257338, 257347, 257352, 257353, 257369, 257377, H01L 2712, H01L 2904, H01L 31062, H01L 310392
Patent
active
055875971
ABSTRACT:
A process for developing conductive interconnect regions between integrated circuit semiconductor devices formed on an insulating substrate utilizes the semiconductor material itself for formation of device interconnect regions.
A patterned layer of semiconductor material is formed directly on the surface of an insulating substrate. The patterned layer includes regions where semiconductor devices are to be formed and regions which are to be used to interconnect terminals of predetermined ones of the semiconductor devices. After forming the semiconductor devices in selected regions of the semiconductor material, the regions of the semiconductor material patterned for becoming interconnects are converted to a metallic compound of the semiconductor material.
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Parker et al. "Lattice Images of Defect-Free Silicon on Sapphire Prepared Ion Implantation", Applied Physics Letters, vol. 47, No. 6, Sep. 15, 1985, pp. 626-628.
Garcia Graham A.
Lagnado Isaac
Reedy Ronald E.
Fendelman Harvey
Kagan Michael A.
Saadat Mahshid
Tang Alice W.
The United States of America as represented by the Secretary of
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