Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1995-06-07
1998-08-04
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257760, H01L 23485
Patent
active
057898197
ABSTRACT:
This invention provides a semiconductor device with reduced capacitance between adjacent conductors. A porous dielectric layer 28 is formed on conductors 24. A non-porous dielectric layer 30 is formed on porous layer 28, and a second porous dielectric layer 36 is formed on non-porous layer 30. The porous dielectric layers comprise open-pored networks, preferably formed by an atmospheric pressure aerogel process. The present invention allows the construction of semiconductor devices employing multiple layers of conductors with porous low dielectric constant insulation.
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Cho Chih-Chen
Gnade Bruce E.
Smith Douglas M.
Donaldson Richard L.
Guay John
Harris James E.
Jackson Jerome
Stoltz Richard A.
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