Transistor with source and drain regions within the semiconducto

Details Transistor with source and drain regions within the semiconducto Transistor with source and drain regions within the semiconducto

1996-12-03

1998-08-04

Wallace, Valencia Martin

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257339, 257369, 438231, H01L 2976, H01L 2994

Patent

active

057897808

ABSTRACT:
An integrated circuit including a detached drain transistor comprising a semiconductor substrate, a gate dielectric, and a first and a second source/drain impurity distribution. The substrate includes a channel region laterally displaced between a first and a second source/drain region. The gate dielectric is formed on an upper surface of the semiconductor substrate. The conductive gate is formed on the gate dielectric and includes a first and a second sidewall. The first and second sidewalls of the conductive gate are laterally displaced from channel boundaries of the first and second source/drain regions by a source/drain displacement. The first and second source/drain impurity distributions are substantially contained within the first and second source/drain regions respectively of the semiconductor substrate. Preferably, the transistor further includes a gate insulator formed in contact with the first and second sidewalls of the semiconductor substrate. Respective exterior sidewalls of the gate insulator are laterally displaced from the first and second sidewalls by a first displacement. The gate dielectric typically comprises an oxide having a thickness of approximately 20 to 200 angstroms while the conductive gate may comprise polysilicon having a sheet resistivity of less than approximately 500 .OMEGA./square. A lateral dimension of the conductive gate is preferably less than 0.3 microns and the breakdown voltage of the transistor is greater than approximately 7 volts.

REFERENCES:
patent: 4818714 (1989-04-01), Haskell
patent: 4951100 (1990-08-01), Parrillo
patent: 4994869 (1991-02-01), Matloubian et al.

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