Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-10-07
1998-08-04
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257345, 257404, 257408, 257411, H01L 29792
Patent
active
057897786
ABSTRACT:
A gate electrode comprises a conductive gate electrode body and gate side walls. The channel region beneath the gate electrode has an NUDC structure having a p.sup.- impurity region and p.sup.+ impurity regions. The p.sup.- impurity region is formed before the gate electrode body. After the formation of the gate electrode body, the p.sup.+ impurity regions are formed by ion implantation before the gate side walls. The ion implantation is carried out perpendicular to the substrate so that the implanted ions will not reach further around the center of the channel region. Of the gate oxide films over the channel region, the thickness of the gate oxide films at both ends of the channel region is thinner than that of the gate oxide film in the middle of the channel length so as to suppress lowering of the current drivability.
REFERENCES:
patent: 5266823 (1993-11-01), Noji et al.
patent: 5422505 (1995-06-01), Shirai
patent: 5512771 (1996-04-01), Hiroki et al.
Okumara, Y., et al., "A Novel Source-to-Drain Nonuniformly Doped Channel (NUDC) MOSFET for High Current Drivability and threshold Voltage Controllability," LSI R&D Laboratory, Mitsubishi Electric Corp., 4-1 Mizuhara, Itami, Hyogo, Japan, .COPYRGT.1990 IEEE, IEDM 90-391, pp. 15.5.1-15.5.4.
Mintel William
Nippon Steel Semiconductor Corporation
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