Semiconductor device and semiconductor device manufacturing meth

Details Semiconductor device and semiconductor device manufacturing meth Semiconductor device and semiconductor device manufacturing meth

1998-11-25

2000-04-11

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257371, 257412, H01L 2976

Patent

active

060491132

ABSTRACT:
A semiconductor device is provided and contains a semiconductor substrate, a first transistor, and a second transistor. The first transistor is formed on the semiconductor substrate and has a first gate electrode. The second transistor is formed on the semiconductor substrate and has a second gate electrode. Also, the thickness of the first gate electrode is different than the thickness of the second gate electrode. Also, a method for forming the semiconductor device is provided.

REFERENCES:
patent: 3673471 (1972-06-01), Klein et al.
patent: 5021354 (1991-06-01), Pfiester
patent: 5278085 (1994-01-01), Maddox, III et al.
patent: 5567642 (1996-10-01), Kim et al.
patent: 5595922 (1997-01-01), Tigelaar et al.

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