Reactor and susceptor for chemical vapor deposition process

Coating apparatus – Gas or vapor deposition – With treating means

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118728, 118500, 219 1049R, 219 1067, C23C 1308

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active

045221499

ABSTRACT:
A reactor for use in a chemical vapor deposition process occurring in a radiant absorption heater system employs a vertical gas flow reaction vessel and a novel substantially solid susceptor configured as a truncated wedge. The susceptor is characterized by a high utilized area, resulting in a high wafer capacity and low power requirement.

REFERENCES:
patent: 3594242 (1971-07-01), Burd et al.
patent: 4322592 (1982-03-01), Martin
patent: 4352713 (1982-10-01), Morita
Pogge et al., "High-Capacity Narrow Susceptor for Vapor Growth Processes", IBM Tech. Disclosure Bulletin, vol. 13, No. 3, Aug. 1970, pp. 804-805.
Castrucci et al., "High Capacity Susceptor", IBM Tech. Disclosure Bulletin, vol. 13, No. 3, Aug. 1970, p. 753.

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