Method of forming shallow junctions by entrapment of interstitia

Details Method of forming shallow junctions by entrapment of interstitia Method of forming shallow junctions by entrapment of interstitia

1996-12-10

1998-08-04

Niebling, John

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

306530, H01L 21265

Patent

active

057893101

ABSTRACT:
In the formation of shallow depth junctions, atoms of inner elements, such as helium, argon, xenon or krypton are implanted at a chosen energy and concentration to create microvoids in the epitaxial layer at a chosen depth. Then, upon implantation of boron ions, the implantation of which creates interstitial silicon atoms, during an anneal step the interstitial atoms fill the voids and determine the junction depth.

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patent: 5544024 (1996-08-01), Anjum et al.
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patent: 5593673 (1997-01-01), Anjum et al.
Raineri, et al., "Secondary Defect Dislocation By Voids", Appl. Phys. Lett., vol. 69, No. 12, Sep. 16, 1996 (pp. 1783-1785).

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