Process for producing nanoporous silica thin films

Details Process for producing nanoporous silica thin films Process for producing nanoporous silica thin films

1998-04-03

2000-04-11

Bowers, Charles

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438787, 438781, 438782, 438624, H01L 21208

Patent

active

060488042

ABSTRACT:
A process for forming a nanoporous dielectric coating on a substrate. The process follows the steps of blending an alkoxysilane with a solvent composition and optional water; depositing the mixture onto a substrate while evaporating at least a portion of the solvent composition; placing the substrate in a sealed chamber and evacuating the chamber to a pressure below atmospheric pressure; exposing the substrate to water vapor at a pressure below atmospheric pressure and then exposing the substrate to base vapor.

REFERENCES:
patent: 5736425 (1998-04-01), Smith et al.

Affiliated with

Also associated with

Rating

Process for producing nanoporous silica thin films does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for producing nanoporous silica thin films, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for producing nanoporous silica thin films will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1176380