Method for crystallizing an amorphous silicon thin film

Details Method for crystallizing an amorphous silicon thin film Method for crystallizing an amorphous silicon thin film

1997-01-23

2000-04-11

Wilczewski, M

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438486, 438487, H01L 2100, H01L 2184

Patent

active

060487585

ABSTRACT:
A little amount of nickel is introduced into an amorphous silicon film formed on a glass substrate to crystallize the amorphous silicon film by heating. In this situation, nickel elements remain in a crystallized silicon film. An amorphous silicon film is formed on the surface of the crystallized silicon film and then subjected to a heat treatment. With this heat treatment, the nickel elements are diffused in the amorphous silicon film, thereby being capable of lowering the concentration of nickel in the crystallized silicon film.

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patent: 5797999 (1998-08-01), Sannomiya et al.
patent: 5837569 (1998-11-01), Makita et al.
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