High-density diode-based read-only memory device

Details High-density diode-based read-only memory device High-density diode-based read-only memory device

1997-08-12

1999-10-05

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257372, 257390, 257394, 257926, 365104, 365105, 365175, 365177, H01L 2940, H01L 2941

Patent

active

059629002

ABSTRACT:
A read-only memory (ROM) device of the type including an array of diode-based memory cells for permanent storage of binary-coded data. The ROM device is partitioned into a memory division and an output division. The memory cells are formed over an insulating layer in the memory division. The insulating layer separates the memory cells from the underlying substrate such that the leakage current that can otherwise occur therebetween can be prevented. Moreover, the coding process is performing by forming contact windows at selected locations rather than by performing ion-implantation as in conventional methods. The fabrication process is thus easy to perform. Since the memory cells are diode-based rather than MOSFET-based, the punch-through effect that usually occurs in MOSFET-based memory cells can be prevented. The diode-based structure also allows the packing density of the memory cells on the ROM device to be dependent on the line width of the polysilicon layers in the ROM device. The feature size of the ROM device is thus dependent on the capability of the photolithographic process. The integration of the ROM device is thus high. The output division includes a plurality of MOSFETs whose gates are coupled to the memory cells in such a manner that the binary data can be read out by detecting the currents in the source/drain regions of these MOSFETs.

REFERENCES:
patent: 4384345 (1983-05-01), Mikome
patent: 4390971 (1983-06-01), Kuo
patent: 5600171 (1997-02-01), Mikahara et al.

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