Field-effect transistor

Details Field-effect transistor Field-effect transistor

1997-09-12

1999-10-05

Fahmy, Wael M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257336, 257344, H01L 2976, H01L 2994

Patent

active

059628987

ABSTRACT:
A field-effect transistor (10, FIG. 2) possesses improved electrostatic discharge characteristics. The transistor (10), formed in a p-type semiconductor substrate, comprises a gate (16) that forms a channel between two adjacent n-regions (12 and 14). At least one of the n-regions (12) has an n-well (22) below and centered about a contact pad (18). The n-well (22) has a second lower concentration of n-type impurities than either of the n-regions.

REFERENCES:
patent: 4052229 (1977-10-01), Pashley
patent: 4808544 (1989-02-01), Matsui
patent: 4878100 (1989-10-01), McDavid
patent: 4920445 (1990-04-01), Jun
patent: 4968644 (1990-11-01), Gallagher et al.
patent: 5019888 (1991-05-01), Scott et al.
patent: 5162888 (1992-11-01), Co et al.
patent: 5221635 (1993-06-01), Duvvury
patent: 5281841 (1994-01-01), Van Roozendaal et al.
patent: 5714783 (1998-02-01), Duvvury
Lin et al, "A CMOS VLSI Eds Input Protection Device, DIFIDW", Electrical Overstress/Electrostatic Discharge Symposium Proceedings, The EOS/ESD Association and IIT Research Institute, No. EOS-6, Oct. 2, 3, 4, 1984, pp. 202-209.

Affiliated with

Also associated with

Rating

Field-effect transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Field-effect transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field-effect transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1174542