Semiconductor device and method for forming the same

Details Semiconductor device and method for forming the same Semiconductor device and method for forming the same

1997-06-30

1999-10-05

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 66, 257384, 257411, 257900, H01L 2701, H01L 2976, H01L 2994, H01L 31062

Patent

active

059628979

ABSTRACT:
A thin film transistor device incorporates a silicide film contacting the source and drain. The silicide layer substantially reduces parasitic resistance between the source and drain of the device, improving the performance of the TFT. The silicide layer may be formed by covering the silicon semiconductor with a metal and irradiating the metal with a laser to initiate a reaction with the adjacent silicon to produce a silicide film. The layer may also be formed by rigidly adhering a metal coating to the exposed source and drain regions using a triangular-shaped insulator, and allowing the metal to react with silicon.

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