Thin film transistor including oxidized film by oxidation of the

Details Thin film transistor including oxidized film by oxidation of the Thin film transistor including oxidized film by oxidation of the

1995-12-14

1999-10-05

Martin-Wallace, Valencia

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 57, 257 60, 257 66, 257 72, H01L 2976, H01L 2701

Patent

active

059628960

ABSTRACT:
A thin film transistor (TFT) has a substrate. There is provided on the substrate a gate electrode, a gate insulating layer, a semiconductor layer, ohmic contact layers, electrodes (i.e., a source electrode and a drain electrode), and a protective layer in this order. An oxidized film is provided on a channel area of the semiconductor layer. With the arrangement, it is possible, without providing a channel protective layer, to prevent undesirable etching to the channel area, thereby greatly reducing the number of defective products. Since it is not necessary to make the semiconductor layer thicker than is required, it is possible to minimize the occurrence that the TFT characteristic is affected by the projected light. In addition, it is possible to realize miniaturization and to get a great aperture ratio when used as a switching element in a liquid crystal display (LCD) device.

REFERENCES:
patent: 5054887 (1991-10-01), Kato et al.
patent: 5308998 (1994-05-01), Yamazaki et al.
patent: 5334859 (1994-08-01), Matsuda
patent: 5427962 (1995-06-01), Sasaki et al.

Affiliated with

Also associated with

Rating

Thin film transistor including oxidized film by oxidation of the does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thin film transistor including oxidized film by oxidation of the, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film transistor including oxidized film by oxidation of the will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1174529