Non-volatile semiconductor memory

Details Non-volatile semiconductor memory Non-volatile semiconductor memory

1997-04-30

1999-10-05

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257322, H01L 29788

Patent

active

059628901

ABSTRACT:
A non-volatile semiconductor memory in which a plurality of flash memory cells are arranged in a matrix, each flash memory cell including source and drain regions formed on a silicon substrate, a floating gate formed on at least a part of the source and drain regions with a dielectric film provided therebetween, and a control gate formed on the floating gate with a dielectric layer provided therebetween, wherein a writing operation is performed by applying a positive voltage to the drain region and a negative voltage to the control gate and extracting electrons from the floating gate to the drain region by an FN tunnel current, a common source line for connecting the source region of the flash memory cells includes a diffusion layer formed in the silicon substrate and a silicide formed on the diffusion layer, and impurity concentration of the source region and the common source line are set lower than the impurity concentration of the drain region.

REFERENCES:
patent: 5488245 (1996-01-01), Shimizu
Muller et al, Device Electronics for IC's, pp. 452-454, 1986.

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