Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-11-24
1999-10-05
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257307, 257308, 438239, 438241, 438251, 438252, 438254, 438255, 438256, 438394, 438398, H01L 27108, H01L 2976, H01L 2994, H01L 31119
Patent
active
059628863
ABSTRACT:
In the semiconductor device according to the invention, a tubular storage node is formed, then slanting rotation implantation of impurity phosphorus ions is executed for changing the phosphorus concentration and the etching rate at the thermal phosphoric acid treatment time is changed for roughening the surface under good control. Since the surface roughening does not extend to the center of the film of the storage node, the strength of the storage node can be held sufficient. Therefore, the capacitance can be increased.
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"42-th Synki Ouyoubuturi Gakkai Yokusyu," T. Hirota et al., Extended Abstract, 1993 ECS Fall Meeting, 93-2, 306.
Matsumoto Masami
Mori Kiyoshi
Tsuchimoto Junichi
Mitsubishi Denki & Kabushiki Kaisha
Ngo Ngan V.
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