Method of forming a capacitor and a capacitor construction

Details Method of forming a capacitor and a capacitor construction Method of forming a capacitor and a capacitor construction

1997-09-23

1999-10-05

Crane, Sara

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257308, 257309, H01L 27108

Patent

active

059628855

ABSTRACT:
The invention encompasses capacitor constructions. In one aspect, the invention includes a stacked capacitor construction comprising: a) a substrate; b) an electrically conductive runner provided on the substrate, the runner having an outer conductive surface; c) a node on the substrate adjacent the electrically conductive runner; d) an electrically conductive pillar in electrical connection with the node, the pillar projecting outwardly relative to the node adjacent the conductive runner, the pillar having an outer surface; e) an electrically conductive storage node container layer in electrical connection with the pillar; f) a capacitor dielectric layer over the capacitor storage node layer; and g) an electrically conductive outer capacitor plate over the capacitor dielectric layer; and h) the pillar outer surface being elevationally inward of the runner outer surface.

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patent: 5438010 (1995-08-01), Saeki
patent: 5498562 (1996-03-01), Dennison et al.
patent: 5512768 (1996-04-01), Lur et al.
patent: 5604147 (1997-02-01), Fisher et al.

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