Process for fabricating layered superlattice materials and AB0.s

Coating processes – Heat decomposition of applied coating or base material

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4271263, 4273722, 427 79, 427 96, 438 3, B05D 302, H01L 213205

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059620692

ABSTRACT:
A liquid precursor containing a metal is applied to a first electrode, dried in air at a first temperature of 160.degree. C. and then a second temperature of 260.degree. C., RTP baked at a temperature of 300.degree. C. in oxygen, RTP baked at a temperature of 650.degree. C. in nitrogen, and annealed at a temperature of 800.degree. C. in nitrogen to form a strontium bismuth tantalate layered superlattice material. A second electrode is deposited and then the device is patterned to form a capacitor, and a second anneal is performed at a temperature of 800.degree. C. in nitrogen. Alternatively, the second anneal may be performed in oxygen at a temperature of 600.degree. C. or less. In this manner, a high electronic quality thin film of a layered superlattice material is fabricated without a high-temperature oxygen anneal.

REFERENCES:
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patent: 5508226 (1996-04-01), Ito et al.
Y. Shi, E. Sanchez-Carambot, L.J. Martinez-Miranda, and J.J. Santiago-Aviles; "Growth of BaTiO.sub.3 Thin Films By Metallo-Organic Deposition and Rapid Thermal Annealing Under Controlled Atmosphere"; 1990 IEEE 7th International Symposium On Applications Of Ferroelectrics, Urbana-Champaign, Illinois, USA, Jun. 6-8, 1990; pp. 720-721.
Azar Nazeri; "Crystallization of sol-gel deposited potassium-tantalate-niobate thin films on platinum"; Applied Physics Letters, vol. 65, No. 3, Jul. 18, 1994; pp. 295-297.
Aslam et al, Appl. Phys. lett. 53(2) Jul. 1988, p. 153-156.

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