Method for pulling single crystals

Details Method for pulling single crystals Method for pulling single crystals

1989-06-01

1990-12-25

Straub, Gary P.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566171, 1566203, 1566204, 156DIG64, 422249, C30B 1502, C30B 2702, C30B 2906

Patent

active

049800159

ABSTRACT:
In a method for pulling a single crystal, employing a double crucible assembly, the dopant concentration of the molten raw material in an inner crucible prior to the pulling, is raised to a value higher than the dopant concentration C of the molten raw material in the inner crucible at the steady state. Furthermore, at the initial stage of the pulling, the raw material having a dopant content ratio of no greater than kC is introduced into the outer crucible at a rate greater than the rate of decrease of the molten raw material within the inner crucible during the pulling, to achieve a concentration ratio of dopant between the inner and outer crucibles at a target value. Subsequently, the raw material having kC as the dopant content ratio is introduced into the outer crucible, at a rate equal to the rate of decrease of the molten raw material during the pulling.

REFERENCES:
patent: 2892739 (1954-10-01), Rusler
patent: 4134785 (1979-01-01), Lavigna et al.
patent: 4200621 (1980-03-01), Liaw et al.
patent: 4594173 (1986-06-01), Hobgood et al.
patent: 4846927 (1989-07-01), Takahashi

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