Process for producing thin-film transistor

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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29576R, 29578, 29591, 156652, 156653, 156656, 156657, 1566591, 156662, 156667, 357 4, 357 231, 427 88, 427 93, 427 94, H01L 21306, B44C 122, C03C 1500, C23F 102

Patent

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046247378

ABSTRACT:
A gate insulating film, a high-resistivity semiconductor film, a low-resistivity semiconductor film and if necessary a conducting film are successively deposited in lamination without exposing them to any oxidizing atmosphere including atmospheric air, and then the source and drain electrodes are selectively formed.

REFERENCES:
patent: 4331758 (1982-05-01), Luo
patent: 4426407 (1984-01-01), Morin et al.

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