High dielectric constant thin film structure, method for forming

Details High dielectric constant thin film structure, method for forming High dielectric constant thin film structure, method for forming

1997-09-12

2000-08-08

Sough, Hyung- Sub

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

3613214, 257296, 257304, 257310, 257311, 365149, H01G 406, H01G 4232

Patent

active

061010855

ABSTRACT:
There is provided a (Ba, Sr) TiO.sub.3 film of higher dielectric constant and less leakage current for serving as a dielectric thin film of a capacitor in a semiconductor memory. DPM (dipivaloylmethanato) compounds of Ba, Sr and Ti are dissolved in THF (tetrahydrofuran) to obtain Ba(DPM).sub.2 /THF, Sr(DPM).sub.2 /THF and TiO(DPM).sub.2 /THF solutions which are used as source material solutions. A (Ba, Sr) TiO.sub.3 film is formed by a CVD method while increasing a relative percentage of a Ti source material flow rate to a sum of Ba source material flow rate and Sr source material flow rate. The film formation is carried out in multiple steps, and annealing is applied in each step after deposition of the film.

REFERENCES:
patent: 4775203 (1988-10-01), Vakil et al.
patent: 5372850 (1994-12-01), Uchikawa et al.
patent: 5406445 (1995-04-01), Fujii et al.
patent: 5499207 (1996-03-01), Niki et al.
patent: 5527567 (1996-06-01), Desu et al.
patent: 5618761 (1997-04-01), Eguchi et al.
patent: 5621606 (1997-04-01), Hwang
Pierre C. Fazan, Trends in the Development of ULSI DRAM Capacitors, Jan. 3, 1994, pp. 247-256.

Affiliated with

Also associated with

Rating

High dielectric constant thin film structure, method for forming does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High dielectric constant thin film structure, method for forming, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High dielectric constant thin film structure, method for forming will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1156308