Method of forming a capacitor in semiconductor wafer processing

Details Method of forming a capacitor in semiconductor wafer processing Method of forming a capacitor in semiconductor wafer processing

1991-09-10

1993-04-13

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 52, 437 60, 437919, H01L 21265, H01L 2170

Patent

active

052022781

ABSTRACT:
A method of forming a capacitor in semiconductor water processing comprising the following steps: a) providing a conductively doped first layer of polysilicon atop a silicon wafer to a first thickness; b) depositing an undoped second layer of polysilicon over the conductively doped first layer of polysilicon to a second thickness, the layer of undoped polysilicon being deposited at a deposition temperature of at least 590.degree. and having an upper surface; c) impinging laser energy onto the upper surface of the second polysilicon layer at a laser fluence of 0.3 J/cm.sup.2 or greater to roughen the upper surface and thereby increase the capacitance of the second polysilicon layer; d) patterning and etching the first and second polysilicon layers to define a lower capacitor plate; e) providing a layer of capacitor dielectric atop the roughened second polysilicon layer upper surface; and f) providing a layer of conductive material atop the capacitor dielectric to define an upper capacitor plate.

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