Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

1999-05-18

2000-08-08

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

257774, 257750, 257758, 438622, 438629, H01L 2348, H01L 2352, H01L 2940

Patent

active

061005916

ABSTRACT:
There is provided a semiconductor device including a substrate, a first insulating film formed on the substrate, a first electrically conductive layer formed on the first insulating film, a dielectric layer formed on the first electrically conductive layer, the dielectric layer being formed with a first through-hole, a second electrically conductive layer formed on the dielectric layer, the second electrically conductive layer being formed with a second through-hole in alignment with the first through-hole, a second insulating film covering the first and second electrically conductive layers therewith, and a first wiring layer formed on the second insulating film, a first contact hole being formed through the second insulating film, and the dielectric layer and the second electrically conductive layer both in the first and second through-holes, the first wiring layer making electrical contact with the first electrically conductive layer through the first contact hole. The semiconductor device effectively reduces parasitic resistance of the first electrically conductive layer without an increase in an area of the first electrically conductive layer.

REFERENCES:
patent: 5502337 (1996-03-01), Nozaki
patent: 5739587 (1998-04-01), Sato

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