Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Patent
1998-10-13
2000-08-08
Chaudhari, Olik
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
438 29, H01L 3300
Patent
active
061005452
ABSTRACT:
A GaN type semiconductor layer having a new structure is provided which incorporates a substrate having surface which is opposite to a GaN type semiconductor layer and which is made of Ti.
REFERENCES:
patent: 4857415 (1989-08-01), Tustison et al.
patent: 5641582 (1997-06-01), Nire et al.
patent: 5828088 (1998-10-01), Mauk
patent: 5977604 (1999-11-01), Babic et al.
Chiyo Toshiaki
Ito Jun
Noiri Shizuyo
Shibata Naoki
Chaudhari Olik
Toyoda Gosei Co,., Ltd.
Wille Douglas A.
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