High-frequency hybrid semiconductor integrated circuit structure

Details High-frequency hybrid semiconductor integrated circuit structure High-frequency hybrid semiconductor integrated circuit structure

1992-09-30

1995-03-21

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

Insulating material

257712, 257713, 257718, 257719, 333246, 333247, 361688, 361692, 361704, 361709, 361711, 361713, 361714, H01L 2302, H01P 100, H05K 702

Patent

active

053999061

ABSTRACT:
A high-frequency semiconductor hybrid integrated circuit device with desirable high-frequency properties and reduced floating capacitance that is easily manufactured at lower cost with reduced labor. A coupling dielectric substrate bearing conducting films as a circuit pattern is joined to a main dielectric substrate mounted on a heat radiating plate and bearing elements for high frequency amplification to a heat sink. The coupling dielectric substrate should have the same circuit constants at the high-frequency circuit as the main dielectric substrate.

REFERENCES:
patent: 4811166 (1989-03-01), Alvarez et al.
patent: 5235211 (1993-08-01), Hamburgen

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