Semiconductor memory device in which a capacitor electrode of a

Details Semiconductor memory device in which a capacitor electrode of a Semiconductor memory device in which a capacitor electrode of a

1994-06-10

1995-03-21

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257385, 257756, H01L 2978

Patent

active

053998901

ABSTRACT:
A semiconductor memory of the invention includes a semiconductor substrate having a plurality of transistors, a plurality of stacked capacitors connected to portions of the plurality of transistors, a plurality of first level interconnection layers connected to other portions of the plurality of transistors, and a plurality of second level interconnection layers disposed above the stacked capacitors and the first level interconnection layers. Each of the plurality of stacked capacitors includes a first electrode layer, a capacitance insulating film formed on top of the first electrode layer, and a second electrode layer formed on top of the capacitance insulating film. The second electrode layer is connected to a portion of one of the plurality of second level interconnection layers. At least portions of the plurality of first level interconnection layers are connected to other portions of the plurality of second level interconnection layers. Each of the plurality of first level interconnection layers shares the same layer as at least one of the first electrode layer and the second electrode layer.

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S. Kimura et al, IEDM 88, 1988 IEEE, pp. 596-599, "A New Capacitor DRAM Cell Characterized by a Storage Capacitor on a Bit-Line Structure".
T. Kikkawa et al, IEDM 91, 1991 IEEE, pp. 281-284, "A Quarter-Micron Interconnection Technology Using, Al-Si-Cu/TiN Alternated Layers".

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