Method of making a copper interconnect with top barrier layer

Details Method of making a copper interconnect with top barrier layer Method of making a copper interconnect with top barrier layer

1999-09-15

2000-08-08

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438637, 438638, 438660, 438666, 438668, 438678, 438632, 438633, 438628, H01L 2144

Patent

active

061001961

ABSTRACT:
A method for making copper interconnections in an integrated circuit is described. The structure is a damascene copper connector whose upper surface is coplanar with the upper surface of the insulating layer in which it is embedded. Out-diffusion of copper from the connector is prevented by two barrier layers. One is located at the interface between the connector and the insulating layer while the second barrier is an insulating layer which covers the upper surface of the connector. The damascene process involves filling a trench in the surface of the insulator with copper and then removing the excess by chem.-mech. polishing. Since photoresist is never in direct contact with the copper the problem of copper oxidation during resist ashing has been effectively eliminated.

REFERENCES:
patent: 4910169 (1990-03-01), Hoshino
patent: 4931410 (1990-06-01), Tokunaga et al.
patent: 4985750 (1991-01-01), Hoshino
patent: 5084412 (1992-01-01), Nakasaki
patent: 5120572 (1992-06-01), Kumar
patent: 5391517 (1995-02-01), Gelatos et al.
patent: 5447599 (1995-09-01), Li et al.
patent: 5447887 (1995-09-01), Filipiak et al.
patent: 5470789 (1995-11-01), Misawa
patent: 5510651 (1996-04-01), Maniar et al.
patent: 5592024 (1997-01-01), Aoyama et al.
patent: 5612254 (1997-03-01), Mu et al.
patent: 5654232 (1997-08-01), Gardner
patent: 5656860 (1997-08-01), Lee
patent: 5674787 (1997-10-01), Zhao et al.
patent: 5676587 (1997-10-01), Landers et al.
patent: 5817572 (1998-10-01), Chiang et al.
patent: 5821168 (1998-10-01), Jain
patent: 5824599 (1998-10-01), Schacham-Diamand et al.
patent: 5891513 (1999-04-01), Dubin et al.
patent: 5893752 (1999-04-01), Zhang et al.
patent: 5913147 (1999-06-01), Dubin et al.
patent: 5956612 (1999-09-01), Elliott et al.
patent: 5968333 (1999-10-01), Nogami et al.
patent: 5968847 (1999-10-01), Ye et al.
patent: 5969422 (1999-10-01), Ting et al.
patent: 5972192 (1999-10-01), Dubin et al.
patent: 5989623 (1999-11-01), Chen et al.
patent: 6017817 (2000-01-01), Chung et al.
patent: 6022808 (2000-02-01), Nogami et al.
patent: 6033939 (1998-10-01), Agarwala et al.
Sub-Half Micron Copper Interconnects using Reflow of Sputtered Copper Films, by Kazuhide Abe et al., Jun. 27-29, 1995 VMIC conference proceedings, pp. 308-314.

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