Second implant for agglomeration control

Details Second implant for agglomeration control Second implant for agglomeration control

1998-04-09

2000-08-08

Dutton, Brian

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438528, H01L 2144, H01L 21425

Patent

active

061001899

ABSTRACT:
A semiconductor device on a semiconductor wafer and the devices made by the method, wherein improvements are realized to agglomeration control, resistivity, and thermal stability of a titanium disilicide layer on a polysilicon layer. Agglomeration control is achieved through the use of two carefully selected low dose barrier diffusion matrix implants into the polysilicon layer, one of which is situated at an interface between the layer of polysilicon and the resultant layer of titanium disilicide film after heat treatment, and the other of which is near the surface of the resultant layer of titanium disilicide film after heat treatment.

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