Method of selectively forming a contact in a contact hole

Details Method of selectively forming a contact in a contact hole Method of selectively forming a contact in a contact hole

1998-04-14

2000-08-08

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438649, 438630, 438682, 438683, 438664, H01L 214763

Patent

active

061001864

ABSTRACT:
A contact is selectively formed in a contact hole in an insulating layer deposited on a silicon substrate. The contact hole exposes a portion of the substrate. The contact is formed by selectively forming a first layer of titanium silicide in the contact hole on the exposed portion of the substrate. A layer of titanium nitride is then selectively formed on the first layer of titanium silicide. A second layer of titanium silicide is thereafter selectively formed on the layer of titanium nitride to form the contact.

REFERENCES:
patent: 4884123 (1989-11-01), Dixit et al.
patent: 4994410 (1991-02-01), Sun et al.
patent: 4998157 (1991-03-01), Yokoyama et al.
patent: 5242860 (1993-09-01), Nulman et al.
patent: 5652180 (1997-07-01), Shinriki et al.
patent: 5672543 (1997-09-01), Chang et al.
patent: 5725739 (1998-03-01), Hu
patent: 5776830 (1997-10-01), Sumi et al.
patent: 5801425 (1997-08-01), Kuroi et al.
patent: 5858873 (1997-03-01), Vitkavage et al.
patent: 5926737 (1997-08-01), Ameen et al.
Wolf et al. "Silicon Processing for the VLSI Era" vol. 1, pp. 392-392, 1986.
Kamoshida, Kazuyoshi and Kunio, Saito, "Self-aligned TiN Formation by N.sub.2 Plasma Bias Treatment of TiSi.sub.2 Deposited by Selective Chemical Vapor Deposition," Jpn. J.Appl. Phy. vol. 36 (1997) pp. 642-647, Part 1, No. 2, Feb., 1997.

Affiliated with

Also associated with

Rating

Method of selectively forming a contact in a contact hole does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of selectively forming a contact in a contact hole, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of selectively forming a contact in a contact hole will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1149906