Method for forming metal interconnection of semiconductor device

Details Method for forming metal interconnection of semiconductor device Method for forming metal interconnection of semiconductor device

1998-05-20

2000-08-08

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438643, 438648, 438649, 438653, 438654, 438655, 438656, 438660, 438688, 257751, 257753, 257757, 257765, H01L 214763, H01L 2144, H01L 2940

Patent

active

061001821

ABSTRACT:
A method for forming metal interconnection of semiconductor device is disclosed. In the present invention, an aluminum layer in the 10 to 100 .ANG. range is deposited on the bottom of the contact before or after the deposition of a titanium layer for barrier metal, which forms TiAl.sub.3 by the reaction of titanium and aluminum. According to the invention, stable contact resistance and low leakage current can be obtained in the application of ultra shallow junction.

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