Electromigration resistant patterned metal layer gap filled with

Details Electromigration resistant patterned metal layer gap filled with Electromigration resistant patterned metal layer gap filled with

1999-10-12

2000-08-08

Elms, Richard

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438778, 438779, H01L 214763

Patent

active

061001791

ABSTRACT:
Spacings between metal features are gap filled with HSQ without degradation of the electromigration resistance by depositing a conformal dielectric liner encapsulating the metal features before depositing the HSQ gap fill layer. Embodiments include depositing a conformal layer of a high density plasma oxide by high density plasma chemical deposition to a thickness of about 100 .ANG. to about 1,000 .ANG..

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