Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-02-28
2000-08-08
Bowers, Charles
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438 98, 438674, 216 18, 29831, 427 98, H01L 214763, H01L 2100
Patent
active
061001783
ABSTRACT:
A three-dimensional multi-layer electronic device and method for manufacturing same, wherein the device comprises a three-dimensional substrate including a conductive trace on at least one surface of the substrate, a thin layer of dielectric material substantially covering a desired portion of the conductive trace(s) on the substrate, the dielectric layer including vias at selected locations, and applying a coating of conductive material on the dielectric layer and in the vias, and defining a conductive trace in the material to thereby form a multi-layer, interconnected three-dimensional electronic device. Additional layers of dielectric material and conductive traces may be similarly applied to create the desired number of circuit layers. Molded-in structural features, and/or vias may be defined in the appropriate layers to accommodate the attachment and/or interconnection of other electronic devices to the device.
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Glovatsky Andrew Zachary
Sinkunas Peter Joseph
Todd Michael George
Bowers Charles
Ford Motor Company
Hodges Leslie C.
Lee Hsien-Ming
May Roger L.
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