Methods of fabricating silicon carbide power devices by controll

Details Methods of fabricating silicon carbide power devices by controll Methods of fabricating silicon carbide power devices by controll

1998-06-08

2000-08-08

Fourson, George

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

438522, 438965, H01L 21336

Patent

active

061001694

ABSTRACT:
Silicon carbide power devices are fabricated by masking the surface of a silicon carbide substrate to define an opening at the substrate, implanting p-type dopants into the silicon carbide substrate through the opening at implant energy and dosage that form a deep p-type implant, and implanting n-type dopants into the silicon carbide substrate through the opening at implant energy and dosage that form a shallow n-type implant relative to the deep p-type implant. The deep p-type implant and the shallow n-type implant are annealed at less than 1650.degree. C., but preferably more than about 1500.degree.. The annealing preferably takes place for between about five minutes and about thirty minutes. Ramp-up time from room temperature to the anneal temperature is also controlled to be less than about one hundred minutes but more than about thirty minutes. Ramp-down time after annealing is also controlled by decreasing the temperature from the annealing temperature to below about 1500.degree. C. in less than about two minutes. By controlling the ramp-up time, the annealing time and/or temperature and/or the ramp-down time, high performance silicon carbide power devices may be fabricated.

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