Method of locally forming a high-k dielectric gate insulator

Details Method of locally forming a high-k dielectric gate insulator Method of locally forming a high-k dielectric gate insulator

1999-05-11

2000-08-08

Monin, Jr., Donald L.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438197, 438287, 438585, H01L 2200, H01L 2184

Patent

active

061001201

ABSTRACT:
A method of forming a dielectric gate insulator in a transistor is disclosed herein. The method includes depositing a layer of material over a semiconductor structure; depositing a covering layer over the layer of material; selectively creating an aperture in the covering layer, wherein an area of the layer of material is exposed; providing thermal oxidation to the exposed area of the layer of material to produce an oxidized area; providing a gate over the oxidized area; and removing the covering layer.

REFERENCES:
patent: 4084108 (1978-04-01), Fujimoto
patent: 5674771 (1997-10-01), Machida et al.
patent: 5858843 (1999-01-01), Doyle et al.
patent: 5923056 (1999-07-01), Lee et al.
patent: 6010921 (2000-01-01), Soutome

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