Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive
Patent
1998-05-20
2000-08-08
Mulpuri, Savitri
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Physical stress responsive
438524, 438702, 438456, H01L 2100
Patent
active
061001090
ABSTRACT:
A memory device includes a multiplicity of memory cells disposed on a substrate for at least intermittent stable storage of at least two different information states. A writing device is associated with the memory cells for selectively putting one of the multiplicity of memory cells into a predetermined information state by external action. A reading device is associated with the memory cells for external detection of a current or chronologically preceding information state of a selected memory cell. The memory cells have a miniaturized mechanical element. The production of such a memory device is performed with the following steps: full-surface application of a first insulator layer onto a main surface of a substrate; full-surface application of a diaphragm layer being formed of an electrically conductive material onto the first insulator layer; structuring of the diaphragm layer in such a way that first conductor tracks are formed, which have enlargements at points of the memory cells; isotropic etching of the first insulator layer, using the structured diaphragm layer as an etching mask, until such time as a sharp point remains behind in the middle, immediately beneath the enlargement; and removal of all of the material of the fist insulator layer on the underside of the enlargement, thus forming a diaphragm.
REFERENCES:
patent: 3970887 (1976-07-01), Smith et al.
patent: 4979149 (1990-12-01), Popovic et al.
patent: 5216631 (1993-06-01), Sliwa, Jr.
"Field Ablation Storage Device", IBM Technical Disclosure Bulletin, vol. 25, No. 11b, Apr. 1983, pp. 5874-5875.
"Bistable Micromechanical Storage Element in Silicon", K.E. Peterson, IBM Corp., 1978.
Kohlhase Armin
Melzner Hanno
Greenberg Laurence A.
Lerner Herbert L.
Mulpuri Savitri
Siemens Aktiengesellschaft
Stemer Werner H.
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