Infra-red radiation post-exposure bake process for chemically am

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

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430328, 430330, G03C 500

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active

061000124

ABSTRACT:
A photolithographic process for use in semiconductor device manufacturing that includes an infrared radiation-based post exposure bake (PEB) of a chemically amplified resist layer and that improves critical dimension control of a patterned resist layer. The use of infrared radiation with a wavenumber that is preferentially absorbed in the DUV-exposed regions of the chemically amplified resist selectively increases the temperature of the DUV-exposed regions, while maintaining the temperature in the DUV-unexposed regions relatively low. The increased temperature initiates and accelerates acid catalyzed chemical transformation of the resist polymer in the DUV-exposed regions. The lower temperature in the DUV-unexposed regions suppresses the diffusion/migration of acid catalyst into those regions from the DUV-exposed regions.

REFERENCES:
patent: 4532427 (1985-07-01), Matthews et al.
patent: 5352326 (1994-10-01), Cywar et al.
patent: 5932391 (1999-08-01), Ushirogouchi et al.
McMurry, John: Chapter 12, Organic Chemistry, pp. 424-436, 1992.
Ito, H. Chemical Amplification Resists: History and Development Within IBM, IBM J. Res. Develop. vol. 41, No. 1/2 (1997).
Lamola, A. et al.: Chemically Amplified Resists, Sold State Technology, pp. 53-60 (1991).
MacDonald, S. et al.: Chemical Amplification in High-Resolution Imaging Systems, Acc. Chem. Res. vol. 27, No. 6, (1994).

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