Semiconductor nonvolatile memory

Details Semiconductor nonvolatile memory Semiconductor nonvolatile memory

1994-02-28

1996-12-31

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257410, 257411, H01L 29792

Patent

active

055897002

ABSTRACT:
A semiconductor nonvolatile memory comprised of a p-type silicon substrate 3, an n.sup.+ drain 5 and an n.sup.+ source 9, the source and the drain regions defining an MOS channel region 7. On top of the channel region 7 there are laminated a silicon dioxide film 18 and a semiconductor rich oxide film 20 which has been nitrided so as to leave silicon nitride region therein. Further on top of these layers, there is formed a polysilicon film 22, which is etched to form a control electrode. By using the memory cell and appropriate select transistors, a semiconductor nonvolatile memory (EPROM) is constructed.

REFERENCES:
patent: 5319230 (1994-06-01), Nakao
DiMaria, D. J., Ghez, R. and Dong, D. W., "Charge trapping studies in SiO.sub.2 using current injection form Si-rich SiO.sub.2 Films", J. Appl. Phys. 51(9), Sep. 1988.

Affiliated with

Also associated with

Rating

Semiconductor nonvolatile memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor nonvolatile memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor nonvolatile memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1143837