Method for making an improved high voltage thin film transistor

Details Method for making an improved high voltage thin film transistor Method for making an improved high voltage thin film transistor

1993-08-03

1995-05-02

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257347, 257367, 257488, H01L 2978, H01L 2712, H01L 2952

Patent

active

054122414

ABSTRACT:
This application is directed to an improved thin film SOI device in which a gate region extends over a thin layer of silicon having a lateral linear doping region on a buried oxide layer. The gate region of this invention includes a gate electrode and a field plate extending laterally from the gate electrode over the lateral linear doping region.

REFERENCES:
patent: 5113236 (1992-05-01), Arnold et al.
patent: 5124768 (1992-06-01), Mano et al.
Apel et al. IEEE Trans. on Elec Dev vol. 38, No. 7, Jul. 91 pp.1655-1659 "A 100-V Lateral DMOS . . . Silicon-Film-on-Ins."

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