Silicon-on-insulator CMOS device and a liquid crystal display wi

Details Silicon-on-insulator CMOS device and a liquid crystal display wi Silicon-on-insulator CMOS device and a liquid crystal display wi

1994-07-14

1995-05-02

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257349, 257351, 257352, 359 59, H01L 2701, H01L 2713

Patent

active

054122406

ABSTRACT:
A semiconductor device has an NMOS transistor and a PMOS transistor formed on at least one monocrystal Si region formed in a thin-film Si layer formed on an insulation layer. The thickness T.sub.BOX of the insulation layer on which the NMOS and PMOS transistors are formed, the voltage V.sub.SS of a low-voltage power supply and the voltage V.sub.DD of a high-voltage power supply for the NMOS and PMOS transistors satisfy a relationship expressed by the following equation:

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patent: 5060035 (1991-10-01), Nishimura et al.
patent: 5225356 (1993-07-01), Omura et al.
patent: 5233207 (1993-08-01), Anzai
patent: 5241211 (1993-08-01), Tashiro
Pat. Abs. Jp. vol. 12, No. 402 (E-673) Oct. 25, 1988 & JP-A-63142851, Jun. 1988.
P. H. Woerlee et al., "A Half-Micron CMOS Technology Using Ultra-thin Silicon On Insulator", IEDM 90-583 pp. 25.1.1-25.1.4, (1990).
A. Kamgar et al., "Ultra-High Speed CMOS Circuits in Thin SIMOX Films", IEDM 89-829, pp. 34.4.1-34.4.4, (1989).
Kumamoto et al., "An SOI/CMOS Flash A/D Converter", IEICE vol. J71-C, No. 12, pp. 1651-8, (Dec. 1988).

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