Contact geometry for improved lateral MOSFET

Details Contact geometry for improved lateral MOSFET Contact geometry for improved lateral MOSFET

1993-05-14

1995-05-02

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257401, 257758, 257750, 257774, 257775, 257776, H01L 2348

Patent

active

054122392

ABSTRACT:
A geometry for the metal contacts in a lateral MOSFET is disclosed. The cross-sectional shape of the metal contacts, which is usually six-sided but may also be a parallelogram, maximizes the cross-sectional area of the contacts while maintaining a required clearance from the gate layer and a required overhang of the lines in an overlying metal layer.

REFERENCES:
patent: 4012764 (1977-03-01), Satonaka
patent: 4196443 (1980-04-01), Dingwall
patent: 4951101 (1990-08-01), Alter et al.

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