Semiconductor device with improved element isolation and operati

Details Semiconductor device with improved element isolation and operati Semiconductor device with improved element isolation and operati

1993-03-04

1995-05-02

Loke, Steven Ho Yin

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257296, 257385, 257379, 257756, 361311, 365182, H01L 27108, H01L 2976, H01G 406, G11C 1134

Patent

active

054122376

ABSTRACT:
A lower electrode of a capacitor for use in a semiconductor device includes a first semiconductor layer having a predetermined impurity concentration and a second semiconductor layer having an impurity concentration higher than that of the first semiconductor layer. As a result, intensification of an electric field at an end portion of the capacitor can be reduced. In addition, a word line is formed of a buffer layer and a main conductor layer to reduce a parasitic capacitance between the lower electrode of the capacitor and the word line.

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