Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-09-01
1995-11-21
Limanek, Robert P.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257322, H01L 2978
Patent
active
054689813
ABSTRACT:
An improved one-transistor flash EEPROM cell structure and a method for making the same is provided so that the effective channel length dimension is independent of the critical dimensions of the stacked gate structure. The cell structure (110) includes an n.sup.- buried channel/junction region (116) which is implanted in a substrate (112) before formation of a tunnel oxide (126) and a stacked gate structure (134). After the formation of the stacked gate structure, a p-type source region (122) is implanted with a large tilt angle in the substrate. Thereafter, n.sup.+ drain and n.sup.+ source regions (118, 124) are implanted in the substrate so as to be self-aligned to the stacked gate structure. The cell structure of the present invention facilitates scalability to small size and is useful in high density and low voltage power supply applications.
REFERENCES:
patent: 4161039 (1979-07-01), Rossler
patent: 5147811 (1992-09-01), Sakagami
patent: 5278787 (1994-01-01), Iwasa
patent: 5349220 (1994-09-01), Hong
patent: 5378909 (1995-01-01), Chang et al.
Advanced Micro Devices , Inc.
Chin Davis
Limanek Robert P.
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