Semiconductor device having trench type capacitors formed comple

Details Semiconductor device having trench type capacitors formed comple Semiconductor device having trench type capacitors formed comple

1994-08-23

1995-11-21

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 71, 257301, 257347, H01L 2968, H01L 2978, H01L 2992

Patent

active

054689791

ABSTRACT:
A semiconductor device including a silicon substrate, an insulator film formed on said substrate, a transistor provided on said insulator film and a capacitor formed in a trench formed in said insulator film, and a method of manufacturing the same.

REFERENCES:
patent: 4536785 (1985-08-01), Gibbons
patent: 5233207 (1993-08-01), Anzai

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