Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1992-12-08
1994-01-18
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257377, 257587, 257588, 257591, 257755, 257757, 257773, 257776, H01L 2972, H01L 2702, H01L 2348, H01L 2946
Patent
active
052801888
ABSTRACT:
A semiconductor device includes a bipolar transistor and an IIL element fabricated on a single wafer. The emitter region of the bipolar transistor is formed by diffusing the impurity of an impurity layer formed in contact with the base region therein. The impurity layer is formed of a polycide layer formed of a polysilicon layer doped with an impurity and a metal silicide layer laminated on the polysilicon layer, a laminated layer of a polysilicon layer and a refractory metal layer, or a metal silicide layer.
REFERENCES:
patent: 3489964 (1970-01-01), Masuda
patent: 3667008 (1972-08-01), Katnack
patent: 3742319 (1973-12-01), Byran et al.
patent: 4125426 (1978-11-01), Inayoshi et al.
patent: 4362597 (1982-12-01), Fraser et al.
patent: 4364166 (1982-12-01), Crowder et al.
patent: 4373251 (1983-02-01), Wilting
patent: 4400865 (1983-08-01), Goth et al.
patent: 4433470 (1984-02-01), Kameyama et al.
patent: 4497106 (1985-02-01), Momma et al.
patent: 4965220 (1990-10-01), Iwasaki
patent: 5045916 (1991-09-01), Vor et al.
Carroll J.
Kabushiki Kaisha Toshiba
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