Pattern formation resist and pattern formation method

Details Pattern formation resist and pattern formation method Pattern formation resist and pattern formation method

1991-11-27

1994-01-18

McCamish, Marion E.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Radiation sensitive composition or product or process of making

430272, 430326, 430921, 430923, G03C 173

Patent

active

052799212

ABSTRACT:
Disclosed is a pattern formation resist which can be exposed with deep UV, has a high dry etching resistance, has a large allowance in a development manipulation using an aqueous alkali solution, and can form a fine pattern having a good sectional shape. The resist comprises an alkali-soluble polymer and a compound represented by the following formula (I) and simultaneously containing, in a single molecule, a substituent which decomposes with an acid and a group which produces an acid with deep UV: ##STR1## wherein the substituent which decomposes with an acid is present in at least one of R.sub.1 to R.sub.4, and when R.sub.1 to R.sub.4 have a group except for the substituent which decomposes with an acid, R.sub.1 represents a nonsubstituted or substituted aliphatic hydrocarbon group, each of R.sub.2 and R.sub.3 independently represents a hydrogen atom or a non-substituted or substituted aliphatic hydrocarbon group, and R.sub.4 represents a nonsubstituted or substituted aliphatic hydrocarbon group.

REFERENCES:
patent: 4504372 (1985-03-01), Kirchmayr et al.
patent: 4510290 (1985-04-01), Kirchmayr et al.
patent: 4822716 (1989-04-01), Onishi et al.
patent: 4889791 (1989-12-01), Tsuchiya et al.
Journal of Radiation Curing, Oct. 1986, G. Berner, et al., "Latent Sulphonic Acids", pp. 10-23.

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