Method for the growth of silicon carbide single crystals

Details Method for the growth of silicon carbide single crystals Method for the growth of silicon carbide single crystals

1992-08-24

1994-01-18

Straub, Gary P.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156610, 156DIG64, 148DIG148, 437 93, C30B 2302, C30B 2502

Patent

active

052797015

ABSTRACT:
A method for the growth of silicon carbide single crystals is disclosed which includes the step of growing silicon carbide single crystals on a silicon single-crystal substrate. The silicon single-crystal substrate has growth areas with a crystal orientation inclined by an angle .theta. from the [100] direction toward at least one of the [011] and [011] directions and with a lateral dimension d taken along the direction of such inclination toward the [011] or [011] direction. The angle .theta. is set to be in the range of zero to tan.sup.-1 (.sqroot.2/8) degrees (with the proviso that the angle .theta. is not equal to tan.sup.-1 (.sqroot.2/2) degrees). The lateral dimension d is set to be in the range of 0.1 to 100 .mu.m. In this method, the silicon carbide single crystals are grown to a thickness t approximately equal to or greater than (.sqroot.2+tan.theta.)d/.vertline.1-.sqroot.2tan.theta..vertline., so that these silicon carbide single crystals are substantially free of defects such as stacking faults.

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