Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-02-25
1999-08-10
Everhart, Caridad
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438725, 438720, 438669, H01L 21467
Patent
active
059373270
ABSTRACT:
A conductive material is buried into a hole portion of a layer insulating film. A contact portion of the buried conductive material coming in contact with an upper wiring is formed in a convex or concave shape. Materials of the buried conductive material and the upper wiring are selected such that these materials are different from each other. When an upper face of an opening portion of the buried conductive material in a hole portion is formed in a conical shape and .alpha. is set to an angle formed between a surface of the insulating film and a conical slanting face of the upper face of the buried conductive material, a contact area between the buried conductive material and an upper wiring member is equal to 1/cos.alpha. times a contact area between the buried conductive material and the upper wiring member provided in a case in which the upper face of the buried conductive material is formed in the shape of a flat face. In this structure, no contact area between the buried conductive material and the upper wiring member is greatly reduced even when a shift in position between the hole and the upper wiring member is caused.
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patent: 4891094 (1990-01-01), Waldo, III
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patent: 5244534 (1993-09-01), Yu et al.
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patent: 5637534 (1997-06-01), Takeyasu et al.
U.S. Serial No. 08/027985 filed on Mar. 8, 1993.
Everhart Caridad
Ricoh & Company, Ltd.
Ricoh Research Institute of General Electronics Co., Ltd.
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