Method of making a semiconductor device having an SOI structure

Details Method of making a semiconductor device having an SOI structure Method of making a semiconductor device having an SOI structure

1997-11-28

1999-08-10

Dutton, Brian

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438439, 438525, H01L 2100, H01L 2176, H01L 21425

Patent

active

059372842

ABSTRACT:
Generation of parasitic transistor in active layer edge is prevented. In an NMOS region of a semiconductor layer (21) on an insulating film (20), boron ions are implanted by rotary oblique injection, using a nitride film (23) and a resist (253a) as mask. In the vicinity of a region for separating element by LOCOS method, that is, only in the edge region of the semiconductor layer (21) as the active layer of NMOS transistor, boron ions are implanted by about 3.times.10.sup.13 /cm.sup.2. After LOCOS oxidation, the impurity concentration is heightened to such a level as the boron ions may not be sucked up into the oxide film.

REFERENCES:
patent: 4411058 (1983-10-01), Chen
patent: 4912062 (1990-03-01), Verma
patent: 5034335 (1991-07-01), Widdershoven
patent: 5164806 (1992-11-01), Nagatomo et al.
patent: 5344787 (1994-09-01), Nagalingam et al.
patent: 5424225 (1995-06-01), Yamacuchi et al.
patent: 5426062 (1995-06-01), Hwang
patent: 5440161 (1995-08-01), Iwamatsu et al.
patent: 5488001 (1996-01-01), Brotherton
patent: 5614432 (1997-03-01), Goto
patent: 5700728 (1997-12-01), Kuo et al.

Affiliated with

Also associated with

Rating

Method of making a semiconductor device having an SOI structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making a semiconductor device having an SOI structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making a semiconductor device having an SOI structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1130069