Method for dry etching of a substrate surface

Details Method for dry etching of a substrate surface Method for dry etching of a substrate surface

1983-11-15

1984-08-14

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156657, 1566591, 156662, 204192E, 252 791, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

044655533

ABSTRACT:
The invention provides a method for fine pattern-wise etching of a surface layer on a substrate such as semiconductor silicon wafers in a dry process by use of a gaseous mixture of pentafluorochloroethane and sulfur hexafluoride as the etching gas to support the plasma atmosphere. The inventive method is advantageous in the compatibility of the requirements for a large etching rate and a high precision of the fine patterning in contrast to the generally accepted understanding that these two requirements are not compatible with each other since an etching gas having a high etching rate causes remarkable side etching to decrease the precision of the desired patterning.

REFERENCES:
patent: 4330384 (1982-05-01), Okudaira et al.

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